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X-ray topography of threading dislocations in aluminum nitride

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Posted April 30, 2014
X-ray topography of threading dislocations in aluminum nitride
Monochromatic x-ray topographic image for the (1 1 -2 4) reflection in grazing incidence showing a TED array along the <1 -1 0 0> direction [2]. Three edge dislocations are schematically depicted in red. This image was obtained at beamline 1-BM of the APS.

Wide bandgap (WBG) semiconductors are essential to our technology future. Power electronics made with WBG components overcome the upper limits on temperature, frequency, and voltage that apply to silicon based electronics and can help to eliminate up to 90% of present-day power losses in electric conversion.

They are foreseen as essential for future development of electric vehicles, industrial motors, laptop power converters and inverters for connecting wind turbines, and solar panels to the power grid. A wide bandgap also makes them ideal for ultraviolet (UV) detectors that must be blinded from visible light in the solar spectrum, so-called “solar-blind detectors”. Another application is to UV laser diodes. These applications, in general, require single-crystal material, and device performances are degraded by crystalline defects such as dislocations. Dislocations are also deleterious for reliability and lifetimes of devices. X-ray topography is a potent and non-invasive technique for imaging dislocation arrays in crystals, and work to characterize dislocation arrays in aluminum nitride, a WBG semiconductor, by means of x-ray topography has been carried out at the APS by researchers from Stony Brook University.

Read more at: Phys.org

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